Технічний опис SQP90P06-07L_GE3 Vishay Semiconductors
Description: MOSFET P-CH 60V 120A TO220AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції SQP90P06-07L_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| SQP90P06-07L_GE3 | Vishay Siliconix |
 MOSFET P-CH 60V 120A TO220AB Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SQP90P06-07L_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 120A TO220AB Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| SQP90P06-07L_GE3 |
|
Виробник: Vishay Siliconix
MOSFET P-CH 60V 120A TO220AB Транзистори
MOSFET P-CH 60V 120A TO220AB Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| SQP90P06-07L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 60V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.