SQR40N10-25_GE3 Vishay Semiconductors
на замовлення 696 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 243.85 грн |
| 10+ | 155.58 грн |
| 100+ | 99.57 грн |
| 500+ | 83.61 грн |
| 1000+ | 76.76 грн |
| 2000+ | 65.44 грн |
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Технічний опис SQR40N10-25_GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 40A TO252 REV, Packaging: Tape & Reel (TR), Package / Case: TO-252-4, DPak (3 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK) Reverse Lead, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQR40N10-25_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQR40N10-25_GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 100V 40A Automotive 4-Pin(3+Tab) DPAK |
товару немає в наявності |
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SQR40N10-25_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 REV Packaging: Tape & Reel (TR) Package / Case: TO-252-4, DPak (3 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Reverse Lead Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SQR40N10-25_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 REV Packaging: Cut Tape (CT) Package / Case: TO-252-4, DPak (3 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Reverse Lead Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SQR40N10-25-GE3 | Виробник : Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQR4 |
товару немає в наявності |