SQS124ELNW-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 100A TO252AA, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 107A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V, Qualification: AEC-Q101.