| Кількість | Ціна |
|---|---|
| 5+ | 70.18 грн |
| 10+ | 60.78 грн |
| 100+ | 36.02 грн |
| 500+ | 30.11 грн |
| 1000+ | 26.36 грн |
| 3000+ | 22.32 грн |
| 6000+ | 21.56 грн |
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Технічний опис SQS142ELNW-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SLW, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® 1212-8SLW, Packaging: Tape & Reel (TR).
Інші пропозиції SQS142ELNW-T1_GE3 за ціною від 26.16 грн до 88.40 грн
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SQS142ELNW-T1_GE3 | Виробник : Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8SLW Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SLW Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel |
на замовлення 1872 шт: термін постачання 21-31 дні (днів) |
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SQS142ELNW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2442 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SLW Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8SLW Packaging: Tape & Reel (TR) |
товару немає в наявності |