SQS142ENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.04 грн |
| 6000+ | 22.85 грн |
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Технічний опис SQS142ENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8SLW, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 113W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® 1212-8SLW, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V.
Інші пропозиції SQS142ENW-T1_GE3 за ціною від 21.68 грн до 99.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SQS142ENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SLW Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 113W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® 1212-8SLW Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SQS142ENW-T1_GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET |
на замовлення 36399 шт: термін постачання 21-30 дні (днів) |
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| SQS142ENW-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.01 грн |
| 10+ | 55.04 грн |
| 100+ | 38.08 грн |
| 500+ | 29.86 грн |
| 1000+ | 25.41 грн |
| SQS142ENW-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
на замовлення 36399 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.06 грн |
| 10+ | 61.21 грн |
| 100+ | 35.28 грн |
| 500+ | 27.48 грн |
| 1000+ | 24.99 грн |
| 3000+ | 21.81 грн |
| 6000+ | 21.68 грн |