SQS181ELNW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 32.01 грн |
| 6000+ | 28.69 грн |
| 9000+ | 27.60 грн |
| 15000+ | 24.76 грн |
| 21000+ | 24.59 грн |
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Технічний опис SQS181ELNW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8SLW, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8SLW, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQS181ELNW-T1_GE3 за ціною від 26.29 грн до 119.73 грн
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SQS181ELNW-T1_GE3 | Vishay / Siliconix |
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET |
на замовлення 25085 шт: термін постачання 21-30 дні (днів) |
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SQS181ELNW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SLW Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SLW Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 42645 шт: термін постачання 21-31 дні (днів) |
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| SQS181ELNW-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET
на замовлення 25085 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 100.32 грн |
| 10+ | 67.44 грн |
| 100+ | 43.49 грн |
| 500+ | 34.68 грн |
| 1000+ | 30.59 грн |
| 3000+ | 27.77 грн |
| 6000+ | 26.29 грн |
| SQS181ELNW-T1_GE3 |
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Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE P-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2771 pF @ 25 V
Qualification: AEC-Q101
на замовлення 42645 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 73.00 грн |
| 100+ | 48.80 грн |
| 500+ | 36.05 грн |
| 1000+ | 32.91 грн |


