SQS405CENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 12 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5+ | 75.89 грн |
| 10+ | 45.88 грн |
| 100+ | 30.09 грн |
| 500+ | 21.88 грн |
| 1000+ | 19.83 грн |
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Технічний опис SQS405CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 12 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQS405CENW-T1_GE3 за ціною від 17.52 грн до 84.38 грн
| Фото | Назва | Виробник | Інформація |
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SQS405CENW-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs P-CHANNEL 12-V (D-S) 175C AEC-Q101 |
на замовлення 22526 шт: термін постачання 21-30 дні (днів) |
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SQS405CENW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 12 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 13.5A, 4.5V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |