SQS411ENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Power Dissipation (Max): 39.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис SQS411ENW-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V, Power Dissipation (Max): 39.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQS411ENW-T1_GE3 за ціною від 25.68 грн до 96.41 грн
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SQS411ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 16A PPAK1212-8W Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V Power Dissipation (Max): 39.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3551 шт: термін постачання 21-31 дні (днів) |
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SQS411ENW-T1_GE3 | Vishay Semiconductors |
MOSFETs -40V Vds 20V Vgs POWERPAK 1212-8W |
на замовлення 211 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SQS411ENW-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Power Dissipation (Max): 39.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 16A PPAK1212-8W
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 27.3mOhm @ 8A, 10V
Power Dissipation (Max): 39.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3191 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.41 грн |
| 10+ | 58.34 грн |
| 100+ | 38.58 грн |
| 500+ | 28.24 грн |
| 1000+ | 25.68 грн |
| SQS411ENW-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -40V Vds 20V Vgs POWERPAK 1212-8W
MOSFETs -40V Vds 20V Vgs POWERPAK 1212-8W
на замовлення 211 шт:
термін постачання 21-30 дні (днів)