SQS414CENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 19.75 грн |
| 6000+ | 17.54 грн |
| 9000+ | 16.03 грн |
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Технічний опис SQS414CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR).
Інші пропозиції SQS414CENW-T1_GE3 за ціною від 15.78 грн до 74.30 грн
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SQS414CENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® 1212-8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8W Packaging: Cut Tape (CT) |
на замовлення 12580 шт: термін постачання 21-31 дні (днів) |
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SQS414CENW-T1_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 2590 шт: термін постачання 21-30 дні (днів) |
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| SQS414CENW-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
на замовлення 12580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 62.84 грн |
| 10+ | 42.89 грн |
| 100+ | 29.25 грн |
| 500+ | 22.74 грн |
| 1000+ | 20.29 грн |
| SQS414CENW-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
на замовлення 2590 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.30 грн |
| 10+ | 45.69 грн |
| 100+ | 26.05 грн |
| 500+ | 20.11 грн |
| 1000+ | 18.22 грн |
| 3000+ | 15.78 грн |