SQS460ENW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
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Технічний опис SQS460ENW-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8W, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel.
Інші пропозиції SQS460ENW-T1_GE3 за ціною від 27.13 грн до 137.68 грн
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SQS460ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 8A PPAK1212-8W Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8W Packaging: Cut Tape (CT) |
на замовлення 5041 шт: термін постачання 21-31 дні (днів) |
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SQS460ENW-T1_GE3 | Vishay Semiconductors |
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified |
на замовлення 30481 шт: термін постачання 21-30 дні (днів) |
|
| SQS460ENW-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 8A PPAK1212-8W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Cut Tape (CT)
на замовлення 5041 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 81.70 грн |
| 10+ | 53.18 грн |
| 100+ | 40.33 грн |
| 500+ | 31.18 грн |
| 1000+ | 27.13 грн |
| SQS460ENW-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified
на замовлення 30481 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 137.68 грн |
| 10+ | 86.73 грн |
| 100+ | 50.28 грн |
| 500+ | 39.73 грн |
| 1000+ | 36.38 грн |
| 3000+ | 32.40 грн |