SQS482EN-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 3000+ | 28.07 грн |
| 6000+ | 25.09 грн |
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Технічний опис SQS482EN-T1_BE3 Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 62W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V.
Інші пропозиції SQS482EN-T1_BE3 за ціною від 28.98 грн до 107.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQS482EN-T1_BE3 | Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) 175C MOSFET Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
| SQS482EN-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1865 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.62 грн |
| 10+ | 65.28 грн |
| 100+ | 43.35 грн |
| 500+ | 31.83 грн |
| 1000+ | 28.98 грн |