| Кількість | Ціна |
|---|---|
| 3+ | 147.68 грн |
| 10+ | 92.20 грн |
| 100+ | 52.25 грн |
| 500+ | 41.42 грн |
| 1000+ | 36.85 грн |
| 3000+ | 31.58 грн |
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Технічний опис SQS940ELNW-T1_GE3 Vishay
Description: DUAL N-CHANNEL 40-V (D-S) 175C M, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 33W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 25V, Rds On (Max) @ Id, Vgs: 20.3mOhm @ 1.25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W Dual, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQS940ELNW-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SQS940ELNW-T1_GE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 40-V (D-S) 175C M Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8W Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 25V Rds On (Max) @ Id, Vgs: 20.3mOhm @ 1.25A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Dual Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |
| SQS940ELNW-T1/GE3 | Vishay | Vishay |
товару немає в наявності |
В кошику од. на суму грн. |
| SQS940ELNW-T1_GE3 |
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 25V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 25V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.