Технічний опис SQW61N65EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 62A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AD, Grade: Automotive, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції SQW61N65EF-GE3 за ціною від 525.10 грн до 984.82 грн
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SQW61N65EF-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 650V 62A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Grade: Automotive Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 148 шт: термін постачання 21-31 дні (днів) |
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| SQW61N65EF-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 650V 62A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Grade: Automotive
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 62A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 32A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Grade: Automotive
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 344 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7379 pF @ 100 V
Qualification: AEC-Q101
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 984.82 грн |
| 30+ | 580.05 грн |
| 120+ | 525.10 грн |