SSM10N954L,EFF Toshiba Semiconductor and Storage

Description: COMMON-DRAIN NCH MOSFET, 12V, 13, Mounting Type: Surface Mount, Package / Case: 10-SMD, No Lead, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TCSPAC-153001, Vgs(th) (Max) @ Id: 1.4V @ 1.11mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C.