SSM3J118TU(TE85L) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A UFM
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: UFM
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 9+ | 35.60 грн |
| 15+ | 21.41 грн |
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Технічний опис SSM3J118TU(TE85L) Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A UFM, Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: UFM, Power Dissipation (Max): 500mW (Ta).
Інші пропозиції SSM3J118TU(TE85L)
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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SSM3J118TU(TE85L) | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 1.4A UFM Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: UFM Power Dissipation (Max): 500mW (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SSM3J118TU(TE85L) | Toshiba |
 MOSFET Vds=-30V Id=-1.4A 3Pin |
товару немає в наявності |
В кошику од. на суму грн. |
| SSM3J118TU(TE85L) |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A UFM
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: UFM
Power Dissipation (Max): 500mW (Ta)
Description: MOSFET P-CH 30V 1.4A UFM
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: UFM
Power Dissipation (Max): 500mW (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| SSM3J118TU(TE85L) |
|
Виробник: Toshiba
MOSFET Vds=-30V Id=-1.4A 3Pin
MOSFET Vds=-30V Id=-1.4A 3Pin
товару немає в наявності
В кошику
од. на суму грн.