SSM3J118TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: PB-F SMALL LOW ON RESISTANCE PCH
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
на замовлення 2769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.40 грн |
| 16+ | 19.61 грн |
| 100+ | 12.06 грн |
| 500+ | 8.73 грн |
| 1000+ | 7.78 грн |
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Технічний опис SSM3J118TU,LF Toshiba Semiconductor and Storage
Description: PB-F SMALL LOW ON RESISTANCE PCH, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V.
Інші пропозиції SSM3J118TU,LF
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SSM3J118TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: PB-F SMALL LOW ON RESISTANCE PCH Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V |
товару немає в наявності |
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SSM3J118TU,LF | Виробник : Toshiba |
MOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V |
товару немає в наявності |