SSM3J327R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
| Кількість | Ціна |
|---|---|
| 3000+ | 4.66 грн |
| 6000+ | 4.04 грн |
| 9000+ | 3.27 грн |
| 15000+ | 2.98 грн |
| 21000+ | 2.88 грн |
| 30000+ | 2.77 грн |
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Технічний опис SSM3J327R,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції SSM3J327R,LF за ціною від 3.73 грн до 23.96 грн
| Фото | Назва | Виробник | Інформація |
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SSM3J327R,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 3.9A SOT23F Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
на замовлення 67463 шт: термін постачання 21-31 дні (днів) |
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SSM3J327R,LF | Виробник : Toshiba |
MOSFETs Small-Signal MOSFET |
на замовлення 11879 шт: термін постачання 21-30 дні (днів) |
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