SSM3J35CTC,L3F(T TOSHIBA
Виробник: TOSHIBA
Description: TOSHIBA - SSM3J35CTC,L3F(T - Leistungs-MOSFET, p-Kanal, 20 V, 250 mA, 1.1 ohm, CST, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 250mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 500mW
Bauform - Transistor: CST
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1.1ohm
SVHC: To Be Advised
| Кількість | Ціна |
|---|---|
| 49+ | 17.07 грн |
| 78+ | 10.58 грн |
| 110+ | 7.52 грн |
| 500+ | 5.17 грн |
| 1000+ | 4.17 грн |
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Технічний опис SSM3J35CTC,L3F(T TOSHIBA
Description: TOSHIBA - SSM3J35CTC,L3F(T - Leistungs-MOSFET, p-Kanal, 20 V, 250 mA, 1.1 ohm, CST, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 250mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 500mW, Bauform - Transistor: CST, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1.1ohm, SVHC: To Be Advised.
Інші пропозиції SSM3J35CTC,L3F(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SSM3J35CTC,L3F(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C Case: CST3C Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -250mA On-state resistance: 20Ω Power dissipation: 0.5W Gate-source voltage: ±10V |
товару немає в наявності |
В кошику од. на суму грн. |
| SSM3J35CTC,L3F(T |
|
Виробник: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Case: CST3C
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 500mW; CST3C
Case: CST3C
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -250mA
On-state resistance: 20Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
товару немає в наявності
В кошику
од. на суму грн.