SSM3J36TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
| Кількість | Ціна |
|---|---|
| 3000+ | 5.10 грн |
| 6000+ | 4.70 грн |
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Технічний опис SSM3J36TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), FET Type: P-Channel.
Інші пропозиції SSM3J36TU,LF за ціною від 3.31 грн до 28.48 грн
| Фото | Назва | Виробник | Інформація |
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SSM3J36TU,LF | Виробник : Toshiba |
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) |
на замовлення 5340 шт: термін постачання 21-30 дні (днів) |
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SSM3J36TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 330MA UFM Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Packaging: Cut Tape (CT) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads |
на замовлення 8725 шт: термін постачання 21-31 дні (днів) |
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