SSM3K16FV,L3F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Технічний опис SSM3K16FV,L3F Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Інші пропозиції SSM3K16FV,L3F за ціною від 3.73 грн до 15.07 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SSM3K16FV,L3F | Toshiba Semiconductor and Storage |
Description: PB-F VESM S-MOS (LF) TRANSISTOR Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel |
на замовлення 13162 шт: термін постачання 21-31 дні (днів) |
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SSM3K16FV,L3F | Toshiba |
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V |
на замовлення 22803 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM3K16FV,L3F |
|
Виробник: Toshiba Semiconductor and Storage
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Description: PB-F VESM S-MOS (LF) TRANSISTOR
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
на замовлення 13162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 15.07 грн |
| 35+ | 8.78 грн |
| 50+ | 6.29 грн |
| 100+ | 5.12 грн |
| 500+ | 3.73 грн |
| SSM3K16FV,L3F |
|
Виробник: Toshiba
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
на замовлення 22803 шт:
термін постачання 21-30 дні (днів)