| Кількість | Ціна |
|---|---|
| 18+ | 18.38 грн |
| 20+ | 16.98 грн |
| 100+ | 9.70 грн |
| 500+ | 7.60 грн |
| 1000+ | 6.75 грн |
| 3000+ | 4.99 грн |
| 6000+ | 4.64 грн |
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Технічний опис SSM3K336R,LF Toshiba
Description: MOSFET N-CH 30V 3A SOT23F, Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1W (Ta).
Інші пропозиції SSM3K336R,LF за ціною від 7.45 грн до 31.65 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SSM3K336R,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 30V 3A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2108 шт: термін постачання 21-31 дні (днів) |
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| SSM3K336R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 3A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 17+ | 18.89 грн |
| 100+ | 11.94 грн |
| 500+ | 8.37 грн |
| 1000+ | 7.45 грн |