SSM3K339R TOSHIBA
Виробник: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2A
Power dissipation: 1W
Case: SOT23F
Gate-source voltage: ±12V
On-state resistance: 390mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.1nC
Version: ESD
| Кількість | Ціна без ПДВ |
|---|---|
| 41+ | 11.33 грн |
| 65+ | 6.62 грн |
| 100+ | 5.94 грн |
| 500+ | 5.26 грн |
| 3000+ | 5.01 грн |
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Технічний опис SSM3K339R TOSHIBA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 2A; 1W; SOT23F; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 2A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±12V, On-state resistance: 390mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 1.1nC, Version: ESD.