Технічний опис SSM3K35MFV,L3F(T Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723, Polarisation: unipolar, Power dissipation: 0.15W, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±10V, Mounting: SMD, Case: SOT723, Drain-source voltage: 20V, Drain current: 0.18A, On-state resistance: 20Ω, Type of transistor: N-MOSFET, кількість в упаковці: 40000 шт.
Інші пропозиції SSM3K35MFV,L3F(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 +1 |
SSM3K35MFV,L3F(T | Виробник : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Polarisation: unipolar Power dissipation: 0.15W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Mounting: SMD Case: SOT723 Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET кількість в упаковці: 40000 шт |
товар відсутній |
|
|
+1 |
SSM3K35MFV,L3F(T | Виробник : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Polarisation: unipolar Power dissipation: 0.15W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Mounting: SMD Case: SOT723 Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET |
товар відсутній |