SSM3K361TU,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 17.29 грн |
Відгуки про товар
Написати відгук
Технічний опис SSM3K361TU,LXHF Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції SSM3K361TU,LXHF за ціною від 13.57 грн до 70.41 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM3K361TU,LXHF | Toshiba |
MOSFETs N Channel 100V 3.5A AECQ MOSFET |
на замовлення 5774 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SSM3K361TU,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 100V 3.5A SOT323 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 6773 шт: термін постачання 21-31 дні (днів) |
|
| SSM3K361TU,LXHF |
|
Виробник: Toshiba
MOSFETs N Channel 100V 3.5A AECQ MOSFET
MOSFETs N Channel 100V 3.5A AECQ MOSFET
на замовлення 5774 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.41 грн |
| 13+ | 25.96 грн |
| 100+ | 17.09 грн |
| 250+ | 17.02 грн |
| 500+ | 14.63 грн |
| 1000+ | 13.78 грн |
| 3000+ | 13.57 грн |
| SSM3K361TU,LXHF |
|
Виробник: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 6773 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.41 грн |
| 10+ | 42.44 грн |
| 100+ | 27.64 грн |
| 500+ | 19.98 грн |
| 1000+ | 18.06 грн |