SSM3K36TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.51 грн |
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Технічний опис SSM3K36TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SSM3K36TU,LF за ціною від 3.45 грн до 25.32 грн
| Фото | Назва | Виробник | Інформація |
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SSM3K36TU,LF | Виробник : Toshiba |
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) |
на замовлення 3901 шт: термін постачання 21-30 дні (днів) |
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SSM3K36TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA UFM Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5008 шт: термін постачання 21-31 дні (днів) |
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