Технічний опис SSM3K59CTB,L3F Toshiba
Description: MOSFET N-CH 40V 2A CST3B, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: CST3B, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.
Інші пропозиції SSM3K59CTB,L3F
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SSM3K59CTB,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A CST3B Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: CST3B Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
товару немає в наявності |
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SSM3K59CTB,L3F | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A CST3B Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: CST3B Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
товару немає в наявності |