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SSM3K59CTB,L3F

SSM3K59CTB,L3F Toshiba

SSM3K59CTB_datasheet_en_20151126-805947.pdf
Виробник: Toshiba
MOSFET Small-signal MOSFET ID: 2A, VDSS: 40V
на замовлення 16480 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SSM3K59CTB,L3F Toshiba

Description: MOSFET N-CH 40V 2A CST3B, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: CST3B, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.

Інші пропозиції SSM3K59CTB,L3F

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SSM3K59CTB,L3F SSM3K59CTB,L3F Toshiba Semiconductor and Storage Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A CST3B
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 215mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: CST3B
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.