SSM3K62TU,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис SSM3K62TU,LXHF Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції SSM3K62TU,LXHF за ціною від 8.56 грн до 32.33 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SSM3K62TU,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH VDSS:20V ID:0.8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Grade: Automotive Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 5518 шт: термін постачання 21-31 дні (днів) |
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SSM3K62TU,LXHF | Toshiba |
MOSFET SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2 |
на замовлення 5809 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM3K62TU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Grade: Automotive
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Grade: Automotive
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 5518 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.33 грн |
| 14+ | 21.42 грн |
| 100+ | 13.61 грн |
| 500+ | 9.60 грн |
| 1000+ | 8.56 грн |
| SSM3K62TU,LXHF |
|
Виробник: Toshiba
MOSFET SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2
MOSFET SMOS Low RON Nch Vds s:20V ID:0.8A SOT-2
на замовлення 5809 шт:
термін постачання 21-30 дні (днів)