Технічний опис SSM3K7002BF,LF Toshiba
Description: MOSFET N-CH 60V 200MA SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V, Power Dissipation (Max): 200mW (Ta), Supplier Device Package: SC-59, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V.
Інші пропозиції SSM3K7002BF,LF
| Фото | Назва | Виробник | Інформація |
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SSM3K7002BF,LF | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 200MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V |
товару немає в наявності |
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SSM3K7002BF,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V |
товару немає в наявності |