SSM3K7002BF,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-59
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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Технічний опис SSM3K7002BF,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SC-59, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SSM3K7002BF,LF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SSM3K7002BF,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 200MA SC59 Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SC-59 Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SSM3K7002BF,LF | Toshiba |
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SSM3K7002BF,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SC59
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-59
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 200MA SC59
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-59
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SSM3K7002BF,LF |
|
Виробник: Toshiba
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini T/R
Trans MOSFET N-CH Si 60V 0.2A 3-Pin S-Mini T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.