SSM3K7002KF,LXHF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: SMOS NCH I: 0.4A, V: 60V, P: 270
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 4.72 грн |
| 6000+ | 4.10 грн |
| 9000+ | 3.87 грн |
Відгуки про товар
Написати відгук
Технічний опис SSM3K7002KF,LXHF Toshiba Semiconductor and Storage
Description: SMOS NCH I: 0.4A, V: 60V, P: 270, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: S-Mini, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 270mW (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SSM3K7002KF,LXHF за ціною від 3.02 грн до 23.96 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM3K7002KF,LXHF | Виробник : Toshiba Semiconductor and Storage |
Description: SMOS NCH I: 0.4A, V: 60V, P: 270 Power Dissipation (Max): 270mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: S-Mini Vgs(th) (Max) @ Id: 2.1V @ 250µA Qualification: AEC-Q101 Grade: Automotive |
на замовлення 16620 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SSM3K7002KF,LXHF | Виробник : Toshiba |
MOSFETs SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min |
на замовлення 22508 шт: термін постачання 21-30 дні (днів) |
|