SSM5H08TU,LF Toshiba
Виробник: Toshiba
MOSFETs Small Signal MOSFET N-ch+SBD VDSS=20V,VR=20V, I(SBD)=0.5A, VGSS=+/-12V, ID=1.5A,RDS(ON)=0.140Ohma.4V
| Кількість | Ціна |
|---|---|
| 8+ | 44.47 грн |
| 13+ | 26.85 грн |
| 100+ | 15.33 грн |
| 500+ | 11.32 грн |
| 1000+ | 9.63 грн |
| 3000+ | 6.75 грн |
| 6000+ | 6.47 грн |
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Технічний опис SSM5H08TU,LF Toshiba
Description: MOSFET N-CH 20V 1.5A UFV, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD (5 Leads), Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: UFV, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 500mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V.
Інші пропозиції SSM5H08TU,LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SSM5H08TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.5A UFV Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: UFV Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 500mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| SSM5H08TU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 20V 1.5A UFV
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.