SSM5H08TU,LF Toshiba
Виробник: ToshibaMOSFET Small Signal MOSFET N-ch+SBD VDSS=20V,VR=20V, I(SBD)=0.5A, VGSS=+/-12V, ID=1.5A,RDS(ON)=0.140Ohma.4V
на замовлення 4927 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 36.01 грн |
| 13+ | 28.29 грн |
| 100+ | 14.56 грн |
| 1000+ | 9.43 грн |
| 3000+ | 8.23 грн |
| 9000+ | 7.17 грн |
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Технічний опис SSM5H08TU,LF Toshiba
Description: MOSFET N-CH 20V 1.5A UFV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: UFV, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V.
Інші пропозиції SSM5H08TU,LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SSM5H08TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.5A UFV Packaging: Cut Tape (CT) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SSM5H08TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 1.5A UFV Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: UFV Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V |
товару немає в наявності |