SSM5H16TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 9.62 грн |
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Технічний опис SSM5H16TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Supplier Device Package: UFV, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD (5 Leads), Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SSM5H16TU,LF за ціною від 7.10 грн до 44.31 грн
| Фото | Назва | Виробник | Інформація |
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SSM5H16TU,LF | Виробник : Toshiba |
MOSFETs Small Signal MOSFET N-ch + SBD VDSS=30V, VR=30V,I(SBD)=0.8A,VGSS=+/-12V,ID=1.9A,RDS(ON)=0.103Ohm at 4V |
на замовлення 3141 шт: термін постачання 21-30 дні (днів) |
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SSM5H16TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 1.9A UFV Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Supplier Device Package: UFV Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Cut Tape (CT) |
на замовлення 6473 шт: термін постачання 21-31 дні (днів) |
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