SSM6H19NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.65 грн |
| 6000+ | 7.58 грн |
| 9000+ | 7.19 грн |
| 15000+ | 6.35 грн |
| 21000+ | 6.11 грн |
| 30000+ | 5.88 грн |
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Технічний опис SSM6H19NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: 6-UDFN (2x2), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6H19NU,LF за ціною від 9.21 грн до 38.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SSM6H19NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 2A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: 6-UDFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 95805 шт: термін постачання 21-31 дні (днів) |
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SSM6H19NU,LF | Toshiba |
MOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz |
на замовлення 29 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6H19NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 95805 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.49 грн |
| 13+ | 22.90 грн |
| 100+ | 14.59 грн |
| 500+ | 10.30 грн |
| 1000+ | 9.21 грн |
| SSM6H19NU,LF |
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Виробник: Toshiba
MOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz
MOSFETs UDFN6 S-MOS TRSTR Pd: 0.5W F: 1MHz
на замовлення 29 шт:
термін постачання 21-30 дні (днів)