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Технічний опис SSM6J212FE,LF Toshiba
Description: MOSFET P-CH 20V 4A ES6, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6J212FE,LF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SSM6J212FE,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
|
|
SSM6J212FE,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6 Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SSM6J212FE,LF | Toshiba |
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| SSM6J212FE,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| SSM6J212FE,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SSM6J212FE,LF |
|
Виробник: Toshiba
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R
Trans MOSFET P-CH Si 20V 4A 6-Pin ES T/R
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.