| Кількість | Ціна |
|---|---|
| 9+ | 36.67 грн |
| 12+ | 27.90 грн |
| 100+ | 16.17 грн |
| 500+ | 12.73 грн |
| 1000+ | 10.55 грн |
| 2000+ | 9.85 грн |
| 4000+ | 8.09 грн |
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Технічний опис SSM6J212FE,LF Toshiba
Description: MOSFET P-CH 20V 4A ES6, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6J212FE,LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SSM6J212FE,LF | Виробник : Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 20V 4A ES6Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SSM6J212FE,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A ES6 Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: ES6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |