SSM6J401TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
на замовлення 2641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.35 грн |
| 13+ | 23.8 грн |
| 100+ | 14.25 грн |
| 500+ | 12.38 грн |
| 1000+ | 8.42 грн |
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Технічний опис SSM6J401TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V.
Інші пропозиції SSM6J401TU,LF за ціною від 6.9 грн до 35.19 грн
| Фото | Назва | Виробник | Інформація |
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SSM6J401TU,LF | Виробник : Toshiba |
 MOSFET Small Signal MOSFET P-ch VDSS=-30V, VGSS=+/-20V, ID=-2.5A, RDS(ON)=0.145Ohm a. 4V, in UF6 package |
на замовлення 5937 шт: термін постачання 21-30 дні (днів) |
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SSM6J401TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
товар відсутній |