SSM6J412TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.85 грн |
| 6000+ | 6.87 грн |
| 9000+ | 6.51 грн |
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Технічний опис SSM6J412TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6J412TU,LF за ціною від 8.38 грн до 35.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SSM6J412TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 4A UF6 Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 14476 шт: термін постачання 21-31 дні (днів) |
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SSM6J412TU,LF | Toshiba |
MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+/-8V, ID=-4.0A, RDS(ON)=0.0427ohm a. 4.5V, in UF6 package |
на замовлення 6209 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6J412TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 4A UF6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 14476 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.41 грн |
| 15+ | 21.05 грн |
| 100+ | 13.33 грн |
| 500+ | 9.39 грн |
| 1000+ | 8.38 грн |
| SSM6J412TU,LF |
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Виробник: Toshiba
MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+/-8V, ID=-4.0A, RDS(ON)=0.0427ohm a. 4.5V, in UF6 package
MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+/-8V, ID=-4.0A, RDS(ON)=0.0427ohm a. 4.5V, in UF6 package
на замовлення 6209 шт:
термін постачання 21-30 дні (днів)