SSM6J422TU,LXHF Toshiba Semiconductor and Storage

Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +6V, -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).