SSM6J502NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.00 грн |
| 6000+ | 8.78 грн |
| 9000+ | 8.35 грн |
Відгуки про товар
Написати відгук
Технічний опис SSM6J502NU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6J502NU,LF за ціною від 6.89 грн до 43.51 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6J502NU,LF | Виробник : Toshiba |
MOSFETs SM Sig P-CH MOS ID -6A -20V -8 VGSS |
на замовлення 3065 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
SSM6J502NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A 6UDFNB Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 9005 шт: термін постачання 21-31 дні (днів) |
|