| Кількість | Ціна |
|---|---|
| 10+ | 34.30 грн |
| 14+ | 23.13 грн |
| 100+ | 11.04 грн |
| 500+ | 10.34 грн |
| 1000+ | 9.28 грн |
| 3000+ | 7.24 грн |
| 6000+ | 6.89 грн |
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Технічний опис SSM6J503NU,LF Toshiba
Description: MOSFET P-CH 20V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6J503NU,LF за ціною від 10.27 грн до 36.39 грн
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SSM6J503NU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 20V 6A 6UDFNBInput Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 2710 шт: термін постачання 21-31 дні (днів) |
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| SSM6J503NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 2710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 11+ | 28.57 грн |
| 100+ | 19.46 грн |
| 500+ | 13.69 грн |
| 1000+ | 10.27 грн |