SSM6J512NU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 12V 10A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).