SSM6K341NU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).