SSM6K361NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.57 грн |
| 6000+ | 11.09 грн |
| 9000+ | 10.57 грн |
| 15000+ | 9.37 грн |
| 21000+ | 9.05 грн |
| 30000+ | 8.74 грн |
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Технічний опис SSM6K361NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V.
Інші пропозиції SSM6K361NU,LF за ціною від 13.25 грн до 53.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNB Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 65419 шт: термін постачання 21-31 дні (днів) |
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SSM6K361NU,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V |
на замовлення 72351 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6K361NU,LF |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 65419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.88 грн |
| 10+ | 32.02 грн |
| 100+ | 20.63 грн |
| 500+ | 14.74 грн |
| 1000+ | 13.25 грн |
| SSM6K361NU,LF |
|
Виробник: Toshiba
MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
MOSFETs LowON Res MOSFET ID=3.5A VDSS=100V
на замовлення 72351 шт:
термін постачання 21-30 дні (днів)