SSM6K404TU,LF Toshiba
Виробник: ToshibaMOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=3.0A, RDS(ON)=0.055Ohm at 4V, in UF6 package
на замовлення 2328 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 48.44 грн |
| 12+ | 29.17 грн |
| 100+ | 16.61 грн |
| 500+ | 12.30 грн |
| 1000+ | 10.72 грн |
| 3000+ | 8.08 грн |
| 6000+ | 7.62 грн |
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Технічний опис SSM6K404TU,LF Toshiba
Description: MOSFET N-CH 20V 3A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V.
Інші пропозиції SSM6K404TU,LF
| Фото | Назва | Виробник | Інформація |
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SSM6K404TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
товару немає в наявності |
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SSM6K404TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V |
товару немає в наявності |