SSM6K404TU,LF Toshiba
Виробник: Toshiba
MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=3.0A, RDS(ON)=0.055Ohm at 4V, in UF6 package
| Кількість | Ціна |
|---|---|
| 8+ | 45.13 грн |
| 12+ | 27.17 грн |
| 100+ | 15.47 грн |
| 500+ | 11.46 грн |
| 1000+ | 9.99 грн |
| 3000+ | 7.52 грн |
| 6000+ | 7.10 грн |
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Технічний опис SSM6K404TU,LF Toshiba
Description: MOSFET N-CH 20V 3A UF6, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6K404TU,LF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SSM6K404TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SSM6K404TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
товару немає в наявності |