SSM6K514NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
| Кількість | Ціна |
|---|---|
| 3000+ | 12.44 грн |
| 6000+ | 10.82 грн |
| 9000+ | 9.71 грн |
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Технічний опис SSM6K514NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB, Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.4V @ 100µA, Power Dissipation (Max): 2.5W (Ta).
Інші пропозиції SSM6K514NU,LF за ціною від 9.35 грн до 49.84 грн
| Фото | Назва | Виробник | Інформація |
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SSM6K514NU,LF | Виробник : Toshiba |
MOSFETs Small Low ON Resistane MOSFETs |
на замовлення 1805 шт: термін постачання 21-30 дні (днів) |
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SSM6K514NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 12A 6UDFNB Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 13887 шт: термін постачання 21-31 дні (днів) |
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