SSM6K516NU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.61 грн |
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Технічний опис SSM6K516NU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 6A 6UDFNB, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-UDFNB (2x2), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6K516NU,LF за ціною від 7.67 грн до 31.65 грн
| Фото | Назва | Виробник | Інформація |
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SSM6K516NU,LF | Виробник : Toshiba |
 MOSFETs MOS TRANSISTOR |
на замовлення 5321 шт: термін постачання 21-30 дні (днів) |
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SSM6K516NU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 6A 6UDFNB Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 5845 шт: термін постачання 21-31 дні (днів) |
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