SSM6K819R,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 10 A, 0.0258
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 19.11 грн |
| 6000+ | 16.98 грн |
| 9000+ | 16.25 грн |
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Технічний опис SSM6K819R,LF Toshiba Semiconductor and Storage
Description: N-CH MOSFET, 100 V, 10 A, 0.0258, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-TSOP-F, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SSM6K819R,LF за ціною від 14.63 грн до 77.53 грн
| Фото | Назва | Виробник | Інформація |
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SSM6K819R,LF | Виробник : Toshiba |
MOSFETs |
на замовлення 10941 шт: термін постачання 21-30 дні (днів) |
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SSM6K819R,LF | Виробник : Toshiba Semiconductor and Storage |
Description: N-CH MOSFET, 100 V, 10 A, 0.0258 Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP-F Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V |
на замовлення 11892 шт: термін постачання 21-31 дні (днів) |
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