SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A/0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: US6
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 0.4A/0.2A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: US6
Part Status: Not For New Designs
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.87 грн |
6000+ | 6.47 грн |
9000+ | 5.73 грн |
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Технічний опис SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A/0.2A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: US6, Part Status: Not For New Designs.
Інші пропозиції SSM6L09FUTE85LF за ціною від 5.14 грн до 34.04 грн
Фото | Назва | Виробник | Інформація |
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SSM6L09FUTE85LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 0.4A/0.2A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: US6 Part Status: Not For New Designs |
на замовлення 28756 шт: термін постачання 21-31 дні (днів) |
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SSM6L09FUTE85LF | Виробник : Toshiba | MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V |
на замовлення 905264 шт: термін постачання 21-30 дні (днів) |
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