SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: US6
Part Status: Not For New Designs
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.84 грн |
| 6000+ | 5.30 грн |
| 9000+ | 5.00 грн |
| 15000+ | 4.61 грн |
| 21000+ | 4.59 грн |
| 30000+ | 4.52 грн |
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Технічний опис SSM6L09FUTE85LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: US6, Part Status: Not For New Designs.
Інші пропозиції SSM6L09FUTE85LF за ціною від 7.60 грн до 32.33 грн
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SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 0.4A US6 Part Status: Not For New Designs Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1.8V @ 100µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Drain to Source Voltage (Vdss): 30V Power - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 53604 шт: термін постачання 21-31 дні (днів) |
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SSM6L09FUTE85LF | Toshiba |
MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V |
на замовлення 817706 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SSM6L09FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 53604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.33 грн |
| 16+ | 19.12 грн |
| 100+ | 12.13 грн |
| 500+ | 8.52 грн |
| 1000+ | 7.60 грн |
| SSM6L09FUTE85LF |
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Виробник: Toshiba
MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
MOSFETs N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V
на замовлення 817706 шт:
термін постачання 21-30 дні (днів)