Технічний опис SSM6L12TU,LF(T Toshiba
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A, Kind of channel: enhancement, Version: ESD, Type of transistor: N/P-MOSFET, Kind of package: reel; tape, Case: UF6, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: 1.5A, Drain-source voltage: 30/-20V, Drain current: 0.5/-0.5A, On-state resistance: 180/430mΩ, Power dissipation: 0.5W, Gate-source voltage: ±12V; ±20V, кількість в упаковці: 1 шт.
Інші пропозиції SSM6L12TU,LF(T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SSM6L12TU,LF(T | Виробник : TOSHIBA |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: UF6 Mounting: SMD Polarisation: unipolar Pulsed drain current: 1.5A Drain-source voltage: 30/-20V Drain current: 0.5/-0.5A On-state resistance: 180/430mΩ Power dissipation: 0.5W Gate-source voltage: ±12V; ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
||
| SSM6L12TU,LF(T | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-20V; 0.5/-0.5A; Idm: 1.5A Kind of channel: enhancement Version: ESD Type of transistor: N/P-MOSFET Kind of package: reel; tape Case: UF6 Mounting: SMD Polarisation: unipolar Pulsed drain current: 1.5A Drain-source voltage: 30/-20V Drain current: 0.5/-0.5A On-state resistance: 180/430mΩ Power dissipation: 0.5W Gate-source voltage: ±12V; ±20V |
товару немає в наявності |