SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.79 грн |
| 14+ | 22.53 грн |
| 100+ | 14.03 грн |
| 500+ | 9.01 грн |
| 1000+ | 6.93 грн |
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Технічний опис SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6, Part Status: Active, Supplier Device Package: US6, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.2V Drive, Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V, Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA, Drain to Source Voltage (Vdss): 20V, Power - Max: 200mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Інші пропозиції SSM6L35FU(TE85L,F)
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SSM6L35FU(TE85L,F) | Toshiba |
MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 |
на замовлення 35261 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
|
|
SSM6L35FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6 Part Status: Active Supplier Device Package: US6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.2V Drive Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA Drain to Source Voltage (Vdss): 20V Power - Max: 200mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2900 шт В кошику од. на суму грн. |
| SSM6L35FU(TE85L,F) |
|
Виробник: Toshiba
MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
на замовлення 35261 шт:
термін постачання 21-30 дні (днів)
| SSM6L35FU(TE85L,F) |
|
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 0.18A/0.1A US6
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.2V Drive
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 200mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)