| Кількість | Ціна |
|---|---|
| 13+ | 26.75 грн |
| 17+ | 19.17 грн |
| 100+ | 6.33 грн |
| 1000+ | 4.92 грн |
| 4000+ | 4.50 грн |
| 8000+ | 4.22 грн |
| 24000+ | 4.01 грн |
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Технічний опис SSM6L36FE,LM Toshiba
Description: MOSFET N/P-CH 20V 0.5A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA, Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Part Status: Active.
Інші пропозиції SSM6L36FE,LM за ціною від 6.13 грн до 26.90 грн
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SSM6L36FE,LM | Toshiba Semiconductor and Storage |
 Description: MOSFET N/P-CH 20V 0.5A ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Part Status: Active |
на замовлення 1295 шт: термін постачання 21-31 дні (днів) |
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| SSM6L36FE,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.5A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA, 330mA
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
на замовлення 1295 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.90 грн |
| 20+ | 15.77 грн |
| 100+ | 9.90 грн |
| 500+ | 6.91 грн |
| 1000+ | 6.13 грн |