SSM6L36TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: SMALL SIGNAL MOSFET N-CH + P-CH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.34 грн |
| 6000+ | 6.78 грн |
| 9000+ | 6.1 грн |
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Технічний опис SSM6L36TU,LF Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH + P-CH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V, Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V, FET Feature: Logic Level Gate, 1.5V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active.
Інші пропозиції SSM6L36TU,LF за ціною від 5.32 грн до 27.36 грн
| Фото | Назва | Виробник | Інформація |
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SSM6L36TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: SMALL SIGNAL MOSFET N-CH + P-CH Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 330mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, 43pF @ 10V Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V, 1.2nC @ 4V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
на замовлення 13420 шт: термін постачання 21-31 дні (днів) |
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SSM6L36TU,LF | Виробник : Toshiba |
MOSFET Small Signal MOSFET N-ch + P-ch VDSS=20V, VGSS=+/-10V, ID=0.5A, RDS(ON)=0.66ohm a. 4.5V, in UF6 package |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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